📞 +91-7667918914 | ✉️ iarjset@gmail.com
International Advanced Research Journal in Science, Engineering and Technology
International Advanced Research Journal in Science, Engineering and Technology A Monthly Peer-Reviewed Multidisciplinary Journal
ISSN Online 2393-8021ISSN Print 2394-1588Since 2014
IARJSET aligns to the suggestive parameters by the latest University Grants Commission (UGC) for peer-reviewed journals, committed to promoting research excellence, ethical publishing practices, and a global scholarly impact.
← Back to VOLUME 12, ISSUE 2, FEBRUARY 2025

Performance Analysis of 4T-GNRFET based Cascode Amplifier at 45 Nanometer Technology Node for A.I. Applications

Nasreen Bano, M. Nizamuddin

👁 1 view📥 0 downloads
Share: 𝕏 f in

Abstract: In this research paper, design and simulation of 4T-GNRFET Cascode Amplifier at 45 Nanometer Technology Node has been performed. DC voltage gain, average power, bandwidth and output resistance have been computed using HSPICE Software. Further, the low voltage Cascode Op Amp has better DC Gain, output resistance and less power dissipation. DC voltage gain is 39.5dB, average power is 30 nW, bandwidth is 3.6MHz, Phase Margin 89.30 and Output Resistance 35.15 K-Ohms as obtained from simulation results of HSPICE Software. The proposed circuit of 4T-GNRFET based Cascode Amplifier at 45 Nanometer Technology Node is suitable for A.I. Applications due to astonishing electronic properties of proposed circuit.

Keywords: 4T-GNRFET-Cascode amplifier, Output Resistance, Band width, Average Power, DC Gain

How to Cite:

[1] Nasreen Bano, M. Nizamuddin, “Performance Analysis of 4T-GNRFET based Cascode Amplifier at 45 Nanometer Technology Node for A.I. Applications,” International Advanced Research Journal in Science, Engineering and Technology (IARJSET), DOI: 10.17148/IARJSET.2025.12213

Creative Commons License This work is licensed under a Creative Commons Attribution 4.0 International License.